收藏本站
NOT RECOMMENDED FOR
NEW DESIGN
DMN3005LK3
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data
?
?
?
?
?
?
?
?
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
D
?
?
?
?
?
?
Case: TO252
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram
Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.33 grams (approximate)
D
G
D
G
S
S
Top View
Ordering Information (Note 4)
Part Number
DMN3005LK3-13
Pin Out -Top View
Case
TO252
Equivalent Circuit
Packaging
2500 / Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
= Manufacturer’s Marking
N3005L
YYWW
N3005L = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01 - 53)
DMN3005LK3
Document number: DS33318 Rev. 4 - 3
1 of 6
www.diodes.com
May 2013
? Diodes Incorporated
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
DMN3007LSS-13 MOSFET N-CH 30V 16A 8-SOIC
DMN3010LSS-13 MOSFET N-CH 30V 16A 8-SOIC
DMN3018SSS-13 MOSFET N CH 30V 7.3A SO-8
DMN3024LK3-13 MOSFET N-CH 30V 9.78A DPAK
DMN3024LSD-13 MOSFET 2N-CH 30V 5.7A SO8
DMN3024LSS-13 MOSFET N-CH 30V 6.4A SO8
DMN3024SFG-7 MOSFET N-CH 30V 7.5A PWRDI3333-8
DMN3029LFG-7 MOSFET N-CH 30V 5.3A PWRDI333-8
相关代理商/技术参数
DMN3007LSS 制造商:Diodes Incorporated 功能描述:MOSFET N CH W DIODE 30V 16A SO8 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, W DIODE, 30V, 16A, SO8 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, W DIODE, 30V, 16A, SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.005ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:2.5W ;RoHS Compliant: Yes
DMN3007LSS-13 功能描述:MOSFET 2.5W 16A 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN3010LSS 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3010LSS-13 功能描述:MOSFET NMOS SINGLE N-CHANNL 30V 16A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN3018SSD-13 功能描述:MOSFET 30V Dual N-Ch Enh 22mOhm 10V 6.7A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN3018SSS-13 功能描述:MOSFET MOSFET BVDSS: 31V-40 1V-40V SO-8 T&R 2.5K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN3020LK3 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3020LK3-13 功能描述:MOSFET ENHANCE MODE MOSFET 30V N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube